Doping in III-V Semiconductors
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Doping in III-V Semiconductors by E. F. Schubert
Book DescriptionThis is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, auto-compensation and maximum attainable dopant concentration. The timely topic of highly doped semiconductors is discussed as well. Technologically important deep levels are summarized. The properties of deep levels are presented phenomenologically. The final chapter is dedicated to the experimental characterization of impurities.
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Book DetailsISBN: 9780521419192
(228mm x 152mm x 40mm)
Imprint: Cambridge University Press
Publisher: Cambridge University Press
Publish Date: 30-Sep-1993
Country of Publication: United Kingdom
Books By Author E. F. Schubert
Delta-doping of Semiconductors, Paperback (August 2005)
A comprehensive review of the theory and application of delta-doping of semiconductors.
Doping in III-V Semiconductors, Paperback (August 2005)» View all books by E. F. Schubert
This is the first book to describe thoroughly the many facets of doping in compound semiconductors.
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