Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.
Buy MOS (metal Oxide Semiconductor) Physics and Technology book by E.H. Nicollian from Australia's Online Bookstore, Boomerang Books.
(235mm x 157mm x 51mm)
John Wiley & Sons Inc
Publisher: John Wiley & Sons Inc
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