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Description - MOS (metal Oxide Semiconductor) Physics and Technology by E.H. Nicollian

Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.

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Book Details

ISBN: 9780471430797
ISBN-10: 047143079X
Format: Paperback
(235mm x 157mm x 51mm)
Pages: 928
Imprint: John Wiley & Sons Inc
Publisher: John Wiley & Sons Inc
Publish Date: 13-Dec-2002
Country of Publication: United States

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