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Description - Magnetic Memory by Denny D. Tang

If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research.

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Book Details

ISBN: 9780521449649
ISBN-10: 0521449642
Format: Hardback
(247mm x 174mm x 15mm)
Pages: 208
Imprint: Cambridge University Press
Publisher: Cambridge University Press
Publish Date: 22-Apr-2010
Country of Publication: United Kingdom

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Author Biography - Denny D. Tang

Denny D. Tang is Vice President of MagIC Technologies, Inc., and has over 30 years' experience in the semiconductor industry. After receiving his Ph.D. in Electrical Engineering from The University of Michigan in 1975, he spent 15 years at IBM T.J. Watson Research Center, Yorktown Heights, 11 years at IBM Almaden Research Center at San Jose and 6 years at Taiwan Semiconductor Manufacturing Company (TSMC). He is a Fellow of the IEEE, TSMC and the Industrial Technology Research Institute (ITRI). Yuan-Jen Lee is a Senior Engineer at MagIC Technologies, Inc., where he develops advanced magnetic memory technology. He received his Ph.D. from the National Taiwan University in 2003, after which he worked for ITRI, Taiwan, developing toggle MRAM and spin-torque MRAM.